Scientists Create a UV Detector-based On Nanocrystals Synthesized by Using Ion Implantation
August 7, 2018 | Lobachevsky UniversityEstimated reading time: 2 minutes
An international team of researchers from the Lobachevsky University of Nizhny Novgorod, the Indian Institute of Technology Jodhpur and the Indian Institute of Technology Ropar has developed a solar-blind UV photodetector.
Scientists at the Lobachevsky University have been working for several years to develop solar-blind photodetectors operating in the UV spectral band. In the field of electronic technology, this is an important task, since such devices cut off emission with a wavelength higher than 280 nm, which helps to avoid interference from sunlight and to record UV emission during daylight.
"Due to their high sensitivity to deep UV emission and insensitivity to sunlight, solar-blind photodetectors provide a wide range of important applications including the ozone damage detection, jet engine monitoring and flame detection,“ says Alexey Mikhaylov, head of the laboratory at the UNN Physics and Technology Research Institute.
The main materials for creating solar-blind photodetectors are wide-gap semiconductors. Nizhny Novgorod scientists together with Indian colleagues consider Ga2O3 to be a promising semiconductor with a band gap of 4.4-4.9 eV, which cuts off emission with wavelengths higher than 260-280 nm and is capable of detecting emission in the deep ultraviolet range.
The existing methods for Ga2O3 synthesis are quite complicated and poorly compatible with conventional silicon technologies. Besides, the layers obtained by such methods often have many defects. The synthesis of Ga2O3 nanocrystals by means of ion implantation, the basic technology of modern electronics, opens up new possibilities for creating solar-blind photodetectors.
The spectral dependence of photoresponse for this photodetector demonstrates excellent solar-blind ultraviolet characteristics in the wavelength range of 250-270 nm, it also has a high responsivity of 50 mA/μW. The dark current of the photodetector is quite low and amounts to 0.168 mA.
The process of creating such a detector involves the synthesis of Ga2O3 nanocrystals in a Al2O3 film on silicon by ion implantation. The detector obtained by this method has been realized by the scientists for the first time in the world.
Thus, the joint work of the international team of researchers from the Lobachevsky University, the Indian Institute of Technology Jodhpur and the Indian Institute of Technology Ropar has demonstrated the possibility of manufacturing photodetectors that cut off solar radiation (solar-blind photodetectors) capable of working in the deep ultraviolet region and possessing the characteristics that are not inferior to the existing analogs.
"By producing such photodetectors with the help of ion implantation, it will be possible to use the already existing "silicon" technologies and to adapt them to the manufacture of new-generation devices," concludes Alexey Mikhaylov.
Suggested Items
Keynote Preview: Reshaping our Engagement With the World
03/28/2024 | Shawn DuBravac, IPCThe widespread integration of AI across various sectors is broadening its impact, from revolutionizing healthcare with Smart solutions to transforming homes into intuitive spaces, highlighting its crucial role in boosting efficiency and addressing complex challenges. In healthcare, we're witnessing a trend toward personalized care with AI-driven devices like intelligent pillows to mitigate snoring, sophisticated sleep monitors, and innovative patient monitoring systems.
Indium Corporation to Present, Exhibit at EPP InnovationsFORUM
03/28/2024 | Indium CorporationIndium Corporation is set to present and exhibit at EPP InnovationsFORUM, one of Europe’s premier single-day electronics manufacturing forums, on April 17 in Leinfelden-Echterdingen, Germany. Topic areas for 2024 will include AI, automation, sustainability, and quality.
Accenture Invests in Sanctuary AI to Bring AI-Powered, Humanoid Robotics to Work Alongside Humans
03/27/2024 | BUSINESS WIREAccenture has made a strategic investment, through Accenture Ventures, in Sanctuary AI, a developer of humanoid general-purpose robots that are powered by AI and can perform a wide variety of work tasks quickly, safely and effectively.
AT&S Well Prepared to Benefit from AI Boom
03/26/2024 | AT&SThe rapid progress in the development of artificial intelligence promises to revolutionize all areas of daily life in the coming years. In order to operate such AI systems, an enormous amount of computing power is required, which is provided by a vast network of data centres.
The IMAPS Show: A Conversation with John Andresakis
03/26/2024 | Marcy LaRont, PCB007 MagazineOn the last day of the IMAPS Device Packaging Conference, Marcy LaRont sat down with industry veteran John Andresakis of Quantic Ohmega, who attended the conference this week. Not his first time at this event, he talked about the conference, advanced technology, and trying to get the word out about the advanced packaging substrates solution Quantic is offering.