Novel Material Properties of Hybrid Perovskite Nanostructures
February 26, 2019 | KAISTEstimated reading time: 1 minute
A KAIST research team reported a novel non-linear device with the founding property coming from perovskite nanowires. They showed that hybrid perovskite-derived, inorganic-framework nanowires can acquire semi-metallicity, and proposed negative differential resistance (NDR) devices with excellent NDR characteristics that resulted from a novel quantum-hybridization NDR mechanism, implying the potential of perovskite nanowires to be realized in next-generation electronic devices.
Organic-inorganic hybrid halide perovskites have recently emerged as prominent candidates for photonic applications due to their excellent optoelectronic properties as well as their low cost and facile synthesis processes. Prominent progresses have been already made for devices including solar cells, light-emitting diodes, lasers and photodetectors.
However, research on electronic devices based on hybrid halide perovskites has not been actively pursued compared with their photonic device counterparts.
Professor Yong-Hoon Kim from the School of Electrical Engineering and his team took a closer look at low-dimensional organic-inorganic halide perovskite materials, which have enhanced quantum confinement effects, and particularly focused on the recently synthesized trimethylsulfonium (TMS) lead triiodide (CH3)3SPbI3.
Using supercomputer simulations, the team first showed that stripping the (CH3)3S or TMS organic ligands from the TMS PbI3 perovskite nanowires results in semi-metallic PbI3 columns, which contradicts the conventional assumption of the semiconducting or insulating characteristics of the inorganic perovskite framework.
Utilizing the semi-metallic PbI3 inorganic framework as the electrode, the team designed a tunneling junction device from perovskite nanowires and found that they exhibit excellent nonlinear negative differential resistance (NDR) behavior. The NDR property is a key to realizing next-generation, ultra-low-power, and multivalued non-linear devices. Furthermore, the team found that this NDR originates from a novel mechanism that involves the quantum-mechanical hybridization between channel and electrode states.
Professor Kim said, “This research demonstrates the potential of quantum mechanics-based computer simulations to lead developments in advanced nanomaterials and nanodevices. In particular, this research proposes a new direction in the development of a quantum mechanical tunneling device, which was the topic for which the Nobel Laureate in Physics in 1973 was awarded to Dr. Leo Esaki.
Suggested Items
Gartner Forecasts Worldwide IT Spending to Grow 8% in 2024
04/17/2024 | Gartner, Inc.Worldwide IT spending is expected to total $5.06 trillion in 2024, an increase of 8% from 2023, according to the latest forecast by Gartner, Inc. This is an increase from the previous quarter’s forecast of 6.8% growth and puts worldwide IT spending on track to surpass $8 trillion well before the end of the decade.
Argonne, RIKEN Sign a Memorandum of Understanding in Support of AI for Science
04/16/2024 | BUSINESS WIRELeaders in high performance computing in the U.S. and Japan have signed a memorandum of understanding (MOU) establishing a cooperative relationship in support of artificial intelligence (AI) computing projects.
RAICo Fellowship to Widen Participation Within the Field of Robotics and Artificial Intelligence
04/12/2024 | RAICoWOMEN and those early in their academia career who are passionate about robotics and artificial intelligence are encouraged to apply for a RAICo Fellowship.
Indium to Host Free Webinar on Lead-Free Solder Paste for Automotive Applications
04/09/2024 | Indium CorporationIndium Corporation’s Senior Research Metallurgist, Jie Geng, Ph.D., will conduct a webinar on low-voiding, high-reliability, lead-free solder paste for automotive applications.
SMTA Announces Program for High Reliability: Strategic Technology Advancement Research Forum
04/08/2024 | SMTAThe SMTA announced the finalized program for the High Reliability: Strategic Technology Advancement Research Forum which takes place on May 2, 2024 in Olathe, Kansas, USA. The event, now in its second year, addresses challenges for electronics manufacturers in the high reliability sector.