Gallium Oxide Power Transistors with Record Values


Reading time ( words)

 The Ferdinand-Braun-Institut (FBH) has now achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3).

The newly developed ß-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown voltage combined with high current conductivity. With a breakdown voltage of 1.8 kilovolts and a record power figure of merit of 155 megawatts per square centimeter, they achieve unique performance figures close to the theoretical material limit of gallium oxide. At the same time, the breakdown field strengths achieved are significantly higher than those of established wide bandgap semiconductors such as silicon carbide or gallium nitride.

On a footprint as small as possible, these MOSFETs should offer low energy consumption and achieve ever higher power densities, thus working more efficiently. This is where conventional devices reach their limits. Scientists all over the world are therefore investigating new materials and components that can meet these requirements.

Optimized Layer Structure and Gate Topology

In order to achieve these improvements, the FBH team tackled the layer structure and gate topology. The basis was provided by substrates from the Leibniz Institute for Crystal Growth with an optimized epitaxial layer structure. As a result, the defect density could be reduced and electrical properties improved. This leads to lower on-state resistances. The gate is the central ‘switching point’ of field effect transistors, controlled by the gate-source voltage. Its topology has been further optimized, allowing to reduce high field strengths at the gate edge. This in turn leads to higher breakdown voltages.

Share

Print


Suggested Items

Telecom (Compute and Storage) Infrastructure Market to Reach $16.35B in 2022

09/03/2018 | IDC
A new forecast from IDC sizes the market for compute and storage infrastructure for Telecoms at nearly $10.81 billion in 2017. However, as Telecoms aggressively build out their infrastructure, IDC projects this market to see a healthy five-year compound annual growth rate (CAGR) of 6.2% with purchases totaling $16.35 billion in 2022.



Copyright © 2020 I-Connect007. All rights reserved.